Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-02
2005-08-02
Zarneke, David (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S689000
Reexamination Certificate
active
06924234
ABSTRACT:
In a method and apparatus for polishing a Cu metal layer and a method for forming Cu metal wiring, Cu oxide created by a surface oxidation of a Cu metal layer is removed from the wafer. The Cu metal layer, in which Cu oxide is removed, is polished. By polishing the Cu metal layer using the above method, process failures, such as scratches, caused by the presence of remnants of Cu oxide during subsequent polishing can be prevented.
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Hah Sang-Rok
Han Ja-Hyung
Hong Duk-Ho
Park Byung-Lyul
Son Hong-Seong
Geyer Scott B.
Mills & Onello LLP
Zarneke David
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