Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma
Reexamination Certificate
2006-04-04
2009-10-13
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Plasma
C438S017000, C438S514000, C438S485000, C438S788000, C438S789000, C438S709000, C438S792000, C438S793000, C427S523000, C427S524000, C427S525000, C427S530000, C427S531000, C118S722000, C118S7230MW, C118S7230ER, C216S067000, C216S069000, C216S071000, C257SE21143, C257SE21218
Reexamination Certificate
active
07601619
ABSTRACT:
A method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port by a turbo-molecular pump while introducing the gas within the vacuum chamber from a gas supply device, and the pressure within the vacuum chamber is kept at a predetermined value by a pressure regulating valve. A high-frequency power supply for a plasma source supplies a high-frequency power to a coil provided near a dielectric window to generate inductively coupled plasma within the vacuum chamber. A high-frequency power supply for the sample electrode for supplying the high-frequency power to the sample electrode is provided. A matching circuit for the sample electrode and a high-frequency sensor are provided between the sample electrode high-frequency power supply and the sample electrode. An ion current applied to the surface of a sample can be accurately monitored buy using the high-frequency sensor and an arithmetic device.
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Ito Hiroyuki
Jin Cheng-Guo
Mizuno Bunji
Nakayama Ichiro
Okashita Katsumi
Ahmadi Mohsen
McDermott Will & Emery LLP
Mulpuri Savitri
Panasonic Corporation
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