Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Patent
1996-09-27
2000-12-05
Gulakowski, Randy
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
438696, 438733, H01L 2100
Patent
active
061566632
ABSTRACT:
Provided is a method of processing a sample by generating plasma by an electromagnetic wave, wherein a material containing carbon, such as silicon carbide (Sic), is disposed in a vacuum container serving as a discharge region. The inside of an etching chamber is cleaned by O.sub.2 cleaning treatment by using a sheet type dry etching apparatus, and after an inner wall temperature of the etching chamber is set and controlled, a sample is conveyed into the etching chamber, and a TiN cap layer, an Al--Cu alloy layer and a TiN barrier layer are plasma-etched in order by using BCl.sub.3 /Cl.sub.2 /CH.sub.4 /Ar gases with the pattern of a resist film as a mask.
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Journal of Vacuum Science and Technology: Part A, vol. 10, No. 4 PT I, Jul. 1, 1992, pp. 1232-1237, Marx W F et al., "Electron Cycloton Resonance Etching of Aluminum Alloys With BC13-C12-N2".
"Electron Cycloton Resonance Etching of Aluminum alloys with BCl.sub.3 -Cl.sub.2 -N.sub.2 " pp. 1232-1237, Journal of Vacuum Science & Technology, vol. A10, No. 4.
Hamasaki Ryoji
Ishizu Takazumi
Kanai Saburo
Kanekiyo Tadamitsu
Kojima Masayuki
Ahmed Shamim
Gulakowski Randy
Hitachi , Ltd.
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