Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2007-02-20
2007-02-20
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C257S296000, C438S758000
Reexamination Certificate
active
10819392
ABSTRACT:
A method and apparatus for forming a nitrided gate dielectric layer. The method includes generating a nitrogen-containing plasma in a processing chamber via a smooth-varying modulated RF power source to reduce electron temperature spike. Field effect transistor channel mobility and gate leakage current results are improved when the power source is smooth-varying modulated, as compared to square-wave modulated.
REFERENCES:
patent: 6041734 (2000-03-01), Raoux et al.
patent: 6162709 (2000-12-01), Raoux et al.
patent: 6610615 (2003-08-01), McFadden et al.
patent: 2003/0181012 (2003-09-01), Wang et al.
patent: 2003/0232491 (2003-12-01), Yamaguchi
patent: 2004/0038486 (2004-02-01), Chua et al.
patent: 2005/0230047 (2005-10-01), Collins et al.
patent: 0 847 079 (1998-06-01), None
PCT International Search Report and Written Opinion, dated Oct. 7, 2004.
Kraft, et al., “Surface Nitridation of Silicon Dioxide With a High Density Nitrogen Plasma,” J. Vac. Sci. Technol. B 15(4), Jul./Aug. (1997), pp. 967-970.
Krug, et al., “Low Energy Nitrogen Implantation Into Si and SiO2/Si,” Nuclear Instruments and Methods in Physics Research b 175-177 (2001) pp. 694-698.
Park, et al., “Transient Characteristics of Nitrogen Gas-Pulsed Electron Cyclotron Resonance Plasma,” j. Vac. Sci. Technol. A 14(5), Sep./Oct. (1996) pp. 2814-2819.
PCT Notification Concerning Transmittal of Copy of International Preliminary Report on Patentability dated Dec. 15, 2005 for International Application No. PCT/US04/016326).
PCT Written Opinion of the International Searching Authority dated Dec. 15, 2005 for International Application No. PCT/US04/016326).
Chua Thai Cheng
Kraus Philip A.
Applied Materials Inc.
Le Thao P.
Patterson & Sheridan LLP
LandOfFree
Method and apparatus for plasma nitridation of gate... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for plasma nitridation of gate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for plasma nitridation of gate... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3854979