Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-12-05
2006-12-05
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
Reexamination Certificate
active
07145822
ABSTRACT:
According to one embodiment of the present invention a memory subsystem comprises a column and a column select signal line. The column comprises at least one bit line and a write precharge circuit. The write precharge circuit is operable to provide at least a portion of a charge on the at least one bit line. The column select signal line is operable to provide a column select signal selecting the column for a write operation. The write precharge circuit is gated with the column select signal line such that the column select signal is communicated to the write precharge circuit upon selection of the column for the write operation. The write precharge circuit is operable to at least partially restore the charge on the at least one bit line upon receipt of the column select signal after the write operation.
REFERENCES:
patent: 5995431 (1999-11-01), Inui et al.
patent: 6005794 (1999-12-01), Sheffield et al.
patent: 6226215 (2001-05-01), Yoon
patent: 6288928 (2001-09-01), Shinozaki
patent: 6333881 (2001-12-01), Kusunoki et al.
patent: 6459641 (2002-10-01), Fujioka et al.
patent: 6552923 (2003-04-01), Houston
patent: 6631093 (2003-10-01), Kumar et al.
patent: 6674684 (2004-01-01), Shen
patent: 6731564 (2004-05-01), Tran et al.
Brady W. James
Stewart Alan K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tran Anthan
LandOfFree
Method and apparatus for optimal write restore for memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for optimal write restore for memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for optimal write restore for memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3708170