Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2006-03-17
2010-06-29
Meeks, Timothy H (Department: 1792)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C427S255310, C427S255330, C428S640000
Reexamination Certificate
active
07744965
ABSTRACT:
The present invention provides a method and apparatus for forming a zinc oxide thin film with high transparency and high conductivity on a surface of a flexible substrate such as plastic without the indispensable requirement of doping impurities. In the method of forming a zinc oxide thin film by reacting oxygen radicals and zinc atoms on a surface of a substrate placed in a film-forming chamber evacuated to a vacuum, the density of crystal defects that are defects of the atomic arrangement of the zinc oxide thin film is controlled by the temperature of the substrate, and the zinc oxide thin film is thereby formed. It is suitable to form the film while maintaining the temperature of the substrate at 400° C. or less to intentionally disturb the regularity of the atomic arrangement of the zinc oxide thin film.
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Abe Osamu
Fujikawa Yuichiro
Hagihara Shigeru
Hiraki Satoshi
Imazu Chitake
Birch & Stewart Kolasch & Birch, LLP
Meeks Timothy H
Miller, Jr. Joseph
Nakaya Ltd.
Yamanashi Prefecture
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