Method and apparatus for improving gap-fill capability using che

Details Method and apparatus for improving gap-fill capability using che Method and apparatus for improving gap-fill capability using che

1997-02-20

1999-11-23

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438697, 438699, 438734, H01L 21306

Patent

active

059900008

ABSTRACT:
A method and an apparatus for depositing a dielectric layer to fill in a gap between adjacent metal lines. In preferred embodiments of the method, a first dielectric layer is deposited over the lines and subsequently etched using both chemical and physical etchback steps. After the etchback steps are completed, a second dielectric layer is deposited over the first dielectric layer to fill in the gap.

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