Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma
Patent
1999-06-10
2000-08-15
Wilczewski, Mary
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Plasma
438774, 438783, 438787, 438763, H01L 21425, H01L 2131, H01L 21469
Patent
active
061036013
ABSTRACT:
A fluorine-doped silicate glass (FSG) layer having a low dielectric constant and a method of forming such an insulating layer is described. The FSG layer is treated with a post-treatment step to make the layer resistant to moisture absorption and outgassing of fluorine atoms. In one embodiment, the post-treatment step includes forming a thin, undoped silicate glass layer on top of the FSG layer, and in another embodiment, the stability of the FSG film is increased by a post-treatment plasma step.
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Gupta Anand
Lee Peter W.
Rana Virendra V. S.
Robles Stuardo
Verma Amrita
Applied Materials Inc.
Park James
Wilczewski Mary
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