Method and apparatus for gettering fluorine from chamber materia

Details Method and apparatus for gettering fluorine from chamber materia Method and apparatus for gettering fluorine from chamber materia

1996-11-13

1999-08-10

Wortman, Donna C.

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 221, 216 67, B08B 600

Patent

active

059353406

ABSTRACT:
The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

REFERENCES:
patent: 4872947 (1989-10-01), Wang et al.
patent: 4951601 (1990-08-01), Maydan et al.
patent: 5129958 (1992-07-01), Nagashima et al.
patent: 5207836 (1993-05-01), Chang

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