Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1996-07-08
1999-06-29
Dang, Thi
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
438729, 438730, 156345, 118723I, 118723IR, 118723MP, H05H 100
Patent
active
059164557
ABSTRACT:
A low pressure plasma ignition method and apparatus includes an ignition cylinder which passes through an anode of a vacuum chamber, where the outlet of the ignition cylinder forms a nozzle. A coil is arranged around the cylinder and a plasma-generating gas supply pipe passes through an upper part of the cylinder. A plasma-generating gas, such as Argon gas, is supplied to the ignition cylinder in this structure, such that a high density plasma is formed in the ignition cylinder that is expelled into the vacuum chamber while the pressure is reduced through the nozzle. In the vacuum chamber, the expelled plasma becomes a seed plasma, such that a low pressure plasma is readily generated in the vacuum chamber.
REFERENCES:
patent: 5449432 (1995-09-01), Hanawa
patent: 5476182 (1995-12-01), Ishizuka et al.
patent: 5683548 (1997-11-01), Hartig et al.
Applied Materials Inc.
Dang Thi
Glenn Michael
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