Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2002-09-25
2010-06-01
Ahmed, Shamim (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S689000, C438S700000, C438S702000, C438S710000
Reexamination Certificate
active
07727892
ABSTRACT:
Described is a method and apparatus for forming interconnects with a metal-metal oxide electromigration barrier and etch-stop. In one embodiment of the invention, the method includes depositing a metal layer on the top of a planarized interconnect layer, the interconnect layer having an interlayer dielectric (ILD) with a top that is planar with the top of an electrically conductive interconnect. In one embodiment of the invention, the method includes reacting the metal layer with the ILD to form a metal oxide layer on the top of the ILD. At the same time, the metal layer will not be significantly oxidized by the electrically conductive interconnect, thus forming a metal barrier on the electrically conductive interconnect to improve electromigration performance. The metal barrier and metal oxide layer together comprise a protective layer. A second ILD may be subsequently formed on the protective layer, and the protective layer may act an etch-stop during a subsequent etch of the second ILD.
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Kuhn Markus
Leu Jihperng
Maiz Jose A.
Morrow Xiaorong
Ahmed Shamim
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
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