Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-05
2007-06-05
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S261000, C438S287000, C257S410000, C257S295000
Reexamination Certificate
active
11320305
ABSTRACT:
Embodiments of the invention provide a device with a metal gate, a high-k gate dielectric layer and reduced oxidation of a substrate beneath the high-k gate dielectric layer. An oxygen-scavenging spacer layer on side walls of the high-k gate dielectric layer and metal gate may reduce such oxidation during high temperature processes.
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Brask Justin K.
Chau Robert S.
Doczy Mark L.
Metz Matthew V.
Chen George
Ho Anthony
Intel Corporation
Jackson Jerome
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