Method and apparatus for endpoint detection in a semiconductor w

Details Method and apparatus for endpoint detection in a semiconductor w Method and apparatus for endpoint detection in a semiconductor w

1988-07-20

1990-09-04

McGraw, Vincent P.

Optics: measuring and testing

By dispersed light spectroscopy

Utilizing a spectrometer

356355, G01B 902

Patent

active

049539825

ABSTRACT:
A method for endpoint detection in a semiconductor wafer etching system characterized by the steps of: (1) scanning a semiconductor wafer with a narrowly focussed laser beam; (2) analyzing a reflected portion of the beam to determine a preferred parking spot on a preferred flat area of the wafer; (3) parking the beam at the preferred spot; and (4) analyzing the reflected portion of the beam to determine when the preferred flat area has been etched through. The beam spot of the laser beam is smaller than the width of the preferred flat area to eliminate noise generated at the transition boundaries of the flat area. Preferably, the wafer is scanned several times along the same beam path to permit the comparison of several scans to determine the preferred parking spot. The apparatus includes a beam forming assembly; a scanning assembly which causes the laser beam to scan across the wafer; a detection assembly reponsive to a portion of the laser beam which is reflected off of the wafer; and a controller which operates the laser and the scanning assembly and which is responsive to an output of the detection assembly. When output of the detection assembly indicates a cessation of the characteristic etching curve, the controller develops an endpoint detection signal which can automatically shut down the etching system.

REFERENCES:
patent: 4618262 (1986-10-01), Maydan

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