Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1996-06-28
1999-10-19
Vincent, Sean
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
427569, 427579, 438636, 438786, 438787, 438788, 438792, C23C 1454
Patent
active
059683244
ABSTRACT:
A stable process for depositing an antireflective layer. Helium gas is used to lower the deposition rate of plasma-enhanced silane oxide, silane oxynitride, and silane nitride processes. Helium is also used to stabilize the process, so that different films can be deposited. The invention also provides conditions under which process parameters can be controlled to produce antireflective layers with varying optimum refractive index, absorptive index, and thickness for obtaining the desired optical behavior.
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Cheung David
Feng Joe
Huang Judy H.
Yau Wai-Fan
Applied Materials Inc.
Vincent Sean
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