Method and apparatus for depositing a planarized passivation lay

Details Method and apparatus for depositing a planarized passivation lay Method and apparatus for depositing a planarized passivation lay

1997-10-15

1999-06-01

Beck, Shrive

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427579, 4272552, 4272553, 4272557, 438624, 438763, 438784, 438958, C23C 1640

Patent

active

059086726

ABSTRACT:
A planarized passivation layer is described. A planarized passivation layer of the present invention preferably includes a fluorosilicate glass (FSG) layer and a silicon nitride layer. The FSG layer is preferably deposited using triethoxyfluorosilane (TEFS) and tetraethoxyorthosilicate (TEOS). The inclusion of fluorine in the process chemistry provides good gap-fill characteristics in the film thus formed. The TEFS-based process employed by the present invention employs a low deposition rate, on the order of less than about 4500 .ANG./min, and preferably above 3000 .ANG./min, when depositing the FSG layer. The use of low deposition rate results in a positively sloped profile, preventing the formation of voids during the deposition of the FSG layer and the silicon nitride layer.

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