Method and apparatus for copper film quality enhancement...

Details Method and apparatus for copper film quality enhancement... Method and apparatus for copper film quality enhancement...

2007-03-13

2007-03-13

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S633000, C438S638000, C438S660000, C257SE21579, C257SE21586

Reexamination Certificate

active

10987713

ABSTRACT:
The disclosure relates to a method and apparatus for enhancing copper film quality with a two-step deposition. The two step deposition may include depositing a first copper film by electrochemical plating, annealing the first copper film at a desired temperature for a duration of time to remove any impurities, depositing a second copper film and annealing the second copper film for a duration of time to remove impurities. The second copper film can be deposited by electrochemical plating without HCl/C-based additive. The second copper film can also be deposited by sputtering to avoid impurities including C, Cl and S.

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