Method and apparatus for controlling the deposition of a fluorin

Details Method and apparatus for controlling the deposition of a fluorin Method and apparatus for controlling the deposition of a fluorin

1997-09-29

2000-03-14

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

With treating means

156345, C23C 1600

Patent

active

060358033

ABSTRACT:
A process for depositing a dielectric film having a reduced dielectric constant and desirable gap-fill characteristics, at an acceptable deposition rate is disclosed. A filmed deposited according to the present invention possesses acceptable stability, and avoids outgassing of the halogen dopant while resisting shrinkage.
A carbon-based dielectric film is deposited on a substrate in a processing chamber by first flowing a process gas into the processing chamber. The process gas includes a gaseous source of carbon (such as methane (CH.sub.4)) and a gaseous source of a halogen (such as a source of fluorine (e.g., C.sub.4 F.sub.8)). A plasma is then formed from the process gas by applying a first and a second RF power component. Preferably, the second RF component has a frequency of between about 200 kHz and 2 MHz and a power level of between about 5 W and 75 W. The first and a second RF power components are applied for a period of time to deposit a halogen-doped carbon-based layer. The resulting carbon-based film has a low dielectric constant and good gap-fill. The film also exhibits minimal shrinkage during subsequent processing, and may then be annealed.

REFERENCES:
patent: 5661093 (1997-08-01), Ravi
patent: 5804259 (1998-09-01), Robles
patent: 5804471 (1998-09-01), Yamazaki

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