Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2011-08-23
2011-08-23
Kim, Robert (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S492200, C250S492300
Reexamination Certificate
active
08003956
ABSTRACT:
An ion implantation system for neutralizing the space charge effect associated with a high current low energy ion beam. The implantation system includes an ion source configured to receive a dopant gas and generate ions having a particular energy and mass from which ions are extracted through an aperture. A work piece positioned downstream of the ion source for receiving the extracted ions in the form of an ion beam. A bleed gas channel disposed between the ion source and the work piece. The bleed gas channel supplying a gas used to neutralize the space charge effect associated with the ion beam.
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Koo John (Bon-Woong)
Kurunczi Peter F.
Lischer D. Jeffrey
Patel Shardul
Platow Wilhelm P.
Kim Robert
Smyth Andrew
Varian Semiconductor Equipment Associates Inc.
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