Method and apparatus for anisotropic etching

Details Method and apparatus for anisotropic etching Method and apparatus for anisotropic etching

2006-11-28

2006-11-28

Deo, Duy-Vu N (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S706000, C438S719000

Reexamination Certificate

active

07141504

ABSTRACT:
There is disclosed a method of treating a substrate material or a film present on the material surface comprising cyclically performing the following steps: (a) etching the material or film; (b) depositing or forming a passivation layer on the surfaces of an etched feature; and (c) selectively removing the passivation layer from the etched feature in order that the etching proceeds in a direction substantially perpendicular to the material or film surface. At least one of the steps (a) or (b) is performed in the absence of a plasma. Also disclosed is an apparatus for performing the method.

REFERENCES:
patent: 3776187 (1973-12-01), Probst
patent: 4264641 (1981-04-01), Mahoney et al.
patent: 4529475 (1985-07-01), Okano et al.
patent: 4579623 (1986-04-01), Suzuki et al.
patent: 4748043 (1988-05-01), Seaver et al.
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4857142 (1989-08-01), Syverson
patent: 5213621 (1993-05-01), Ivankovits et al.
patent: 5213622 (1993-05-01), Bohling et al.
patent: 5221366 (1993-06-01), Roberts et al.
patent: 5222663 (1993-06-01), Noakes et al.
patent: 5223226 (1993-06-01), Wittmer et al.
patent: 5344676 (1994-09-01), Kim et al.
patent: 5501893 (1996-03-01), Laermer et al.
patent: 4317274 (1994-12-01), None
patent: 19704454 (1998-08-01), None
patent: WO 94/14187 (1994-06-01), None
Butterbaugh et al., “Gas-Phase Etching of Silicon Oxide with Anhydrous HF and Isopropanol,” Proceedings Electrochemical Soc. PV 1994, pp. 374-383.
K. Torek et al., “Reduced Pressure etching of Thermal Oxides in Anhyudrous HF/Alcoholic Gas Mixtures,” J. Electrochem. Soc., vol. 142, No. 4, Apr. 1995, pp. 1322-1326.
M. Wong et al., “Silicon Etch Using Vapor Phase HF/F2O and O3,” J. Electrochem. Soc., vol. 140, No. 2, Feb. 1993, pp. 567-570.
Chun Su Lee et al., “Modeling and Characterization of Gas-Phase Etching of Thermal Oxide and TEOS Oxide Using Anhydrous HF and CH3OH,” J. Electrochem. Soc., vol. 143, No. 3, Mar. 1996, pp. 1099-1103.
Kirt R. Williams et al., “Etch Rates for Micromachining Processing,” Journal of Microelectromechanical Systems, vol. 5, No. 4, Dec. 1996, pp. 256-269.
Gregory T. A. Kovacs et al., “Bulk Micromachining of Silicon,” Proceedings of the IEEE, vol. 86, No. 8, Aug. 1998, pp. 1536-1551.
C. Rinn Cleavelin et al., “Silicon Dioxide Removal in Anhydrous HF Gas,” Nov. 1987, Semiconductor International, pp. 95-99.
D.L. Flamm et al., “Plasma etching,” Chemistry of the Semiconductor Industry, pp. 343-390.

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