Method and apparatus for an efficient memory built-in self...

Error detection/correction and fault detection/recovery – Pulse or data error handling – Digital logic testing

Reexamination Certificate

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Details

C714S025000, C714S030000, C714S042000, C714S718000, C714S734000, C714S742000, C365S201000

Reexamination Certificate

active

10869698

ABSTRACT:
A memory BIST architecture provides an efficient communication interface between external agents, e.g., external tester and a memory BIST module. The memory BIST architecture reduces diagnostics efforts by dividing the search space and allowing the test and debug to be concentrated on the failing memory. The memory BIST architecture is divided into two levels, a memory BIST sequencer level and a satellite memory BIST module. The memory BIST sequencer level includes a set of registers that provide an interface between external agents attempting to communicate with the MBIST module and the Satellite MBIST module.

REFERENCES:
patent: 5450586 (1995-09-01), Kuzara et al.
patent: 5497378 (1996-03-01), Amini et al.
patent: 5600790 (1997-02-01), Barnstijn et al.
patent: 5640542 (1997-06-01), Whitsel et al.
patent: 5691990 (1997-11-01), Kapur et al.
patent: 5715387 (1998-02-01), Barnstijn et al.
patent: 5809293 (1998-09-01), Bridges et al.
patent: 5893009 (1999-04-01), Yamada
patent: 5923675 (1999-07-01), Brown et al.
patent: 5930814 (1999-07-01), Lepejian et al.
patent: 5974579 (1999-10-01), Lepejian et al.
patent: 5995731 (1999-11-01), Crouch et al.
patent: 6067262 (2000-05-01), Irrinki et al.
patent: 6094730 (2000-07-01), Lopez et al.
patent: 6272588 (2001-08-01), Johnston et al.
patent: 6286116 (2001-09-01), Bhavsar
patent: 6289300 (2001-09-01), Brannick et al.
patent: 6367042 (2002-04-01), Phan et al.
patent: 6405331 (2002-06-01), Chien
patent: 6415403 (2002-07-01), Huang et al.
patent: 6424583 (2002-07-01), Sung et al.
patent: 6505317 (2003-01-01), Smith et al.
patent: 6557127 (2003-04-01), Adams et al.
patent: 6560740 (2003-05-01), Zuraski et al.
patent: 6574590 (2003-06-01), Kershaw et al.
patent: 6605988 (2003-08-01), Gauthier et al.
patent: 6643807 (2003-11-01), Heaslip et al.
patent: 6651201 (2003-11-01), Adams et al.
patent: 6651202 (2003-11-01), Phan
patent: 6667918 (2003-12-01), Leader et al.
patent: 6668347 (2003-12-01), Babella et al.
patent: 6681350 (2004-01-01), Adams et al.
patent: 6694461 (2004-02-01), Treuer
patent: 6700946 (2004-03-01), Zarrineh et al.
patent: 6760865 (2004-07-01), Ledford et al.
patent: 6996760 (2006-02-01), Dorsey
patent: 2003/0074616 (2003-04-01), Dorsey
patent: 2003/0074618 (2003-04-01), Dorsey
patent: 2003/0074620 (2003-04-01), Dorsey
patent: 2003/0120974 (2003-06-01), Adams et al.
patent: 2003/0167427 (2003-09-01), Kraus et al.
patent: 2004/0006729 (2004-01-01), Pendurkar
patent: 2004/0199843 (2004-10-01), Hansquine et al.
patent: 2005/0257109 (2005-11-01), Averbuj et al.
Fang et al., “Power-Constrined Embedded Memory BIST Architecture”, Nov. 5, 2003, IEEE Symposium on Defect and Fault Tolerance, pp. 451-458.
Benso et al., “Programmable Bulit-In Self-Testing of Embedded RAM Clusters in System-On-Chip Architectures”, Sep. 2003, IEEE Communications Magazine, pp. 90-97.

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