Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Patent
1997-05-16
2000-09-26
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
117 86, 117202, 118715, C30B 2516
Patent
active
061237663
ABSTRACT:
A method for controlling the temperature of a substrate in a processing chamber. The processing chamber employs a heating control over at least two heating zones. Each heating zone is independently controllable according to a measured signal corresponding to the substrate temperature and a user-definable offset.
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Ballance David S.
Bierman Benjamin
Deaton Paul
Haas Brian
Takahashi Nobuyuki
Applied Materials Inc.
Kunemund Robert
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