Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-07-26
2011-07-26
Lee, Cheung (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C438S283000, C438S682000, C257SE21056, C257SE21177, C257SE21438
Reexamination Certificate
active
07985652
ABSTRACT:
A semiconductor device and method for manufacturing a tensile strained NMOS and a compressive strained PMOS transistor pair, wherein a stressor material is sacrificial is disclosed. The method provides for a substrate, which includes a source/drain for an NMOS transistor, and a PMOS transistor. A first barrier layer is formed on the substrate and a first stressor material is formed on the first barrier layer. The first barrier layer is selectively removed from the PMOS transistor. The substrate is flash annealed and the remaining first stressor material and barrier layer is removed from the substrate.
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Ke Chung-Hu
Ko Chih-Hsin
Kuan Ta-Ming
Lee Wen-Chin
Lee Cheung
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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