Semiconductor device manufacturing: process – Forming schottky junction – Using platinum group metal
Reexamination Certificate
2007-04-03
2007-04-03
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Forming schottky junction
Using platinum group metal
C438S655000, C438S682000
Reexamination Certificate
active
10903319
ABSTRACT:
The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises implanting small atoms into an nMOS semiconductor substrate (130) to a depth (132) no greater than about 30 nanometers into the nMOS semiconductor substrate. The method further comprises depositing a transition metal layer (400) over the nMOS semiconductor substrate. The transition metal layer and the nMOS semiconductor substrate are reacted to form the metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (700).
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Bonifield Thomas D.
Chen Peijun J.
Crank Sue Ellen
Lu Jiong-Ping
Xu Jie-Jie
Brady III W. James
Luu Chuong Anh
McLarty Peter K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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