Metal salicide formation having nitride liner to reduce...

Details Metal salicide formation having nitride liner to reduce... Metal salicide formation having nitride liner to reduce...

2007-01-31

2010-06-08

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257S384000, C257SE21438, C257SE21439

Reexamination Certificate

active

07732298

ABSTRACT:
Disclosed herein are various embodiments of techniques for preventing silicide stringer or encroachment formation during metal salicide formation in semiconductor devices. The disclosed technique involves depositing a protective layer, such as a nitride or other dielectric layer, over areas of the semiconductor device where metal silicide formation is not desired because such formation detrimentally affects device performance. For example, silicon particles that may remain in device features that are formed through silicon oxidation, such as under the gate sidewall spacers and proximate to the perimeter of shallow trench isolation structures, are protected from reacting with metal deposited to form metal silicide in certain areas of the device. As a result, silicide stringers or encroachment in undesired areas is reduced or eliminated by the protective layer.

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