Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2008-01-01
2008-01-01
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S382000, C438S384000, C438S385000, C438S210000, C438S190000, C438S238000, C438S329000, C438S330000, C438S331000, C438S332000, C438S508000, C438S508000, C438S508000, C257S758000, C257S532000, C257S328000
Reexamination Certificate
active
07314786
ABSTRACT:
A metal resistor and resistor material and method of forming the metal resistor are disclosed. The metal resistor may include an infused metal selected from the group consisting of: copper (Cu) infused with at least one of silicon (Si), nitrogen (N2), carbon (C), tantalum (Ta), titanium (Ti) and tungsten (W), and aluminum infused with at least one of silicon (Si), nitrogen (N2), carbon (C), tantalum (Ta), titanium (Ti) and tungsten (W). The method is less complex than conventional processes, allows control of the resistance by the amount of infusion material infused, and is compatible with conventional BEOL processes.
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Chanda Kaushik
Chen Shyng-Tsong
Yang Chih-Chao
Ahmadi Mohsen
Hoffman Warnick & D'Alessandro LLC
International Business Machines - Corporation
Jaklitsch Lisa U.
Lebentritt Michael
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