Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-10-31
2010-02-02
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S259000, C257S330000, C257SE21428, C257S396000
Reexamination Certificate
active
07655522
ABSTRACT:
A metal oxide semiconductor (MOS) includes an isolation layer disposed in a semiconductor substrate to define an active region. A source region and a drain region are disposed on both sides of the active region such that a first direction is defined from the source region to the drain region. A channel recess is disposed in the active region between the source and drain regions. The channel recess has a convex surface when viewed from a cross-sectional view taken along a second direction orthogonal to the first direction. A gate electrode fills the channel recess and crosses the active region in the second direction. A gate insulating layer is interposed between the gate electrode and the active region.
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Korean Office Action, KR 10-2004-0088512, Jan. 26, 2006.
Chung Tae-Young
Kim Yong-Sung
Lee Jae
Myers Bigel Sibley & Sajovec P.A.
Richards N Drew
Samsung Electronics Co,. Ltd.
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