Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-29
2011-03-29
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S153000, C438S154000, C257S369000, C257SE21632
Reexamination Certificate
active
07915112
ABSTRACT:
A CMOS FinFET semiconductor device provides an NMOS FinFET device that includes a compressive stress metal gate layer over semiconductor fins and a PMOS FinFET device that includes a tensile stress metal gate layer over semiconductor fins. A process for forming the same includes a selective annealing process that selectively converts a compressive metal gate film formed over the PMOS device to the tensile stress metal gate film.
REFERENCES:
patent: 6706571 (2004-03-01), Yu et al.
patent: 6858478 (2005-02-01), Chau et al.
patent: 7190050 (2007-03-01), King et al.
patent: 7247887 (2007-07-01), King et al.
patent: 7265008 (2007-09-01), King et al.
patent: 7508031 (2009-03-01), Liu et al.
patent: 7528465 (2009-05-01), King et al.
patent: 7605449 (2009-10-01), Liu et al.
patent: 2005/0153490 (2005-07-01), Yoon et al.
patent: 2007/0120156 (2007-05-01), Liu et al.
patent: 2007/0122953 (2007-05-01), Liu et al.
patent: 2007/0122954 (2007-05-01), Liu et al.
patent: 2007/0128782 (2007-06-01), Liu et al.
patent: 2007/0132053 (2007-06-01), King et al.
patent: 2007/0190708 (2007-08-01), Kaneko et al.
patent: 2008/0237719 (2008-10-01), Doyle et al.
patent: 2008/0290470 (2008-11-01), King et al.
patent: 2008/0296632 (2008-12-01), Moroz et al.
patent: 2008/0296681 (2008-12-01), Georgakos et al.
patent: 2009/0181477 (2009-07-01), King et al.
Chang Yong Kang, et al. Article: Effects of Film Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/High-k Dielectric SOI FinFETs. Journal: IEEE Electron Device Letters, vol. 29, No. 5, May 2008, pp. 487-490. ISSN: 0741-3106.
Official Action issued Oct. 21, 2010 in counterpart Taiwan application.
Chang Chi-Sheng
Wann Clement H.
Xu Jeff J.
Yeh Chi Chieh
Diallo Mamadou
Duane Morris LLP
Richards N Drew
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Metal gate stress film for mobility enhancement in FinFET... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal gate stress film for mobility enhancement in FinFET..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal gate stress film for mobility enhancement in FinFET... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2744687