Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-19
2006-12-19
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S199000, C438S585000, C438S586000, C438S588000, C257S510000, C257SE21580
Reexamination Certificate
active
07151023
ABSTRACT:
A MOSFET structure and method of forming is described. The method includes forming a metal-containing layer that is thick enough to fully convert the semiconductor gate stack to a semiconductor metal alloy in a first MOSFET type region but only thick enough to partially convert the semiconductor gate stack to a semiconductor metal alloy in a second MOSFET type region. In one embodiment, the gate stack in a first MOSFET region is recessed prior to forming the metal-containing layer so that the height of the first MOSFET semiconductor stack is less than the height of the second MOSFET semiconductor stack. In another embodiment, the metal-containing layer is thinned over one MOSFET region relative to the other MOSFET region prior to the conversion process.
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Cabral, Jr. Cyril
Fang Sunfei
Kedzierski Jakub T
Kumar Mahender
Nayfeh Hasan M.
Ahmadi Mohsen
Lebentritt Michael
Todd M.C. Li
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