Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-06-28
2000-07-04
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438628, 438636, 438688, H01L 214763
Patent
active
06083823&
ABSTRACT:
A metal layer is formed at high deposition rate over severe topography by a two step process including formation of a seed layer by cold deposition followed by a second portion of the metal layer deposited at a temperature approximating but below a temperature at which metal from a lower metal layer can extrude through vias reaching thereto. The seed layer is preferably limited to a thickness at which the conformality of the cold-deposited metal will not significantly increase severity of surface topography, generally about one-fourth the thickness of the hot-deposited layer. Via connections are formed without voids and a more planar metal layer surface is formed which allows formation of a protective/anti-reflective layer with good integrity while enhancing subsequent lithographic patterning, thereby eliminating alteration of metal surface chemistry by resist developers and resultant residual metal included within the severe topography.
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Dave Parth P.
Greco Nancy A.
Levine Ernest N.
Restaino Darryl D.
Anderson, Esq. Jay H.
International Business Machines - Corporation
Quach T. N.
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