Metal carbide gate structure and method of fabrication

Details Metal carbide gate structure and method of fabrication Metal carbide gate structure and method of fabrication

2006-03-10

2010-02-23

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S010000, C257S011000

Reexamination Certificate

active

07667278

ABSTRACT:
A semiconductor device such as a complementary metal oxide semiconductor (CMOS) including at least one FET that includes a gate electrode including a metal carbide and method of fabrication are provided. The CMOS comprises dual work function metal gate electrodes whereby the dual work functions are provided by a metal and a carbide of a metal.

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