Metal carbide gate structure and method of fabrication

Details Metal carbide gate structure and method of fabrication Metal carbide gate structure and method of fabrication

2006-06-20

2006-06-20

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S592000, C438S153000, C438S650000, C438S686000

Reexamination Certificate

active

07064050

ABSTRACT:
A semiconductor device such as a complementary metal oxide semiconductor (CMOS) comprising at least one FET that comprises a gate electrode comprising a metal carbide and method of fabrication are provided. The CMOS comprises dual work function metal gate electrodes whereby the dual work functions are provided by a metal and a carbide of a metal.

REFERENCES:
patent: 6869889 (2005-03-01), Brask et al.
patent: 2005/0101134 (2005-05-01), Brask et al.
patent: 2005/0167755 (2005-08-01), Dubin et al.

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