Metal capacitor including lower metal electrode having...

Details Metal capacitor including lower metal electrode having... Metal capacitor including lower metal electrode having...

2011-04-12

2011-04-12

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S240000, C438S241000

Reexamination Certificate

active

07923323

ABSTRACT:
Disclosed is a metal capacitor including a lower electrode having hemispherical metal grains thereon. The metal capacitor includes a lower metal electrode containing Ti, hemispherical metal grains containing Pd and formed on the lower metal electrode containing Ti, a dielectric layer formed on the lower metal electrode containing Ti and the hemispherical metal grains containing Pd, and an upper metal electrode formed on the dielectric layer.

REFERENCES:
patent: 6677217 (2004-01-01), Joo et al.
patent: 6777776 (2004-08-01), Hieda
patent: 7034353 (2006-04-01), Thakur et al.
patent: 2002/0019107 (2002-02-01), Lin et al.
patent: 2003/0040177 (2003-02-01), Kim et al.
patent: 2000-216356 (2000-08-01), None
patent: 10-0223831 (1999-07-01), None
patent: 2003-0000555 (2003-01-01), None
English language abstract for Korean Publication No. 10-0223831.
English language abstract for Korean Publication No. 2003-0000555.
English language abstract for Japanese Publication No. 2000-216356.

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