Memory utilizing oxide-nitride nanolaminates

Details Memory utilizing oxide-nitride nanolaminates Memory utilizing oxide-nitride nanolaminates

2006-07-25

2009-02-24

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S261000, C438S270000, C438S591000, C438S593000

Reexamination Certificate

active

07494873

ABSTRACT:
Structures, systems and methods for transistors utilizing oxide-nitride nanolaminates are provided. One transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A gate is separated from the channel region by a gate insulator. The gate insulator includes oxide-nitride nanolaminate layers to trap charge in potential wells formed by different electron affinities of the oxide-nitride nanolaminate layers.

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