Error detection/correction and fault detection/recovery – Pulse or data error handling – Digital data error correction
Reexamination Certificate
2004-10-20
2008-12-30
Ton, David (Department: 2117)
Error detection/correction and fault detection/recovery
Pulse or data error handling
Digital data error correction
C714S710000
Reexamination Certificate
active
07472331
ABSTRACT:
A memory system may include a plurality of non-volatile memory cells and a memory controller coupled to the plurality of non-volatile memory cells. The plurality of non-volatile memory cells may be arranged in blocks with each block including a plurality of pages of non-volatile memory cells. Moreover, the plurality of non-volatile memory cells may include a plurality of data blocks of non-volatile memory cells, a plurality of reserved blocks of non-volatile memory cells, and at least one management block of non-volatile memory cells. The memory controller may be configured to receive a data address for a page of non-volatile memory cells of a data block during a memory access operation, and to determine if the page of non-volatile memory cells corresponding to the data address is identified as being defective in the at least one management block. If the page of non-volatile memory cells corresponding to the data address is identified as being defective in the at least one management block, the memory controller may be further configured to direct the memory access operation to a page of a reserved block of non-volatile memory cells. Related methods are also discussed.
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Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
Ton David
LandOfFree
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