Memory device with separate read and write gate voltage...

Details Memory device with separate read and write gate voltage... Memory device with separate read and write gate voltage...

2007-03-01

2009-11-17

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Read/write circuit

Multiplexing

C365S189140, C365S189150, C365S189160, C365S191000

Reexamination Certificate

active

07619935

ABSTRACT:
A circuit and method are provided for controlling the gate voltage of a transistor acting between local and global input/output lines of a memory device, the circuit including a local input/output line, a local from/to global input/output multiplexer in signal communication with the local input/output line, a global input/output line in signal communication with the local from/to global input/output multiplexer, and a local from/to global input/output controller having an input node and an output node, the input node disposed for receiving a signal indicative of an input or output operation, and the output node in signal communication with a gate of the local from/to global input/output multiplexer for providing a gate signal of a first or second level in the presence of the output operation, and a gate signal of a third level in the presence of the input operation.

REFERENCES:
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