Memory device and method for fabricating the same

Details Memory device and method for fabricating the same Memory device and method for fabricating the same

2006-03-20

2008-03-04

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S274000

Reexamination Certificate

active

07338864

ABSTRACT:
Disclosed are a memory device and a method for fabricating the same. The memory device includes: a substrate provided with a trench; a bit line contact junction formed beneath the trench; a plurality of storage node contact junctions formed outside the trench; and a plurality of gate structures each being formed on the substrate disposed between the bit line contact junction and one of the storage node contact junctions. Each sidewall of the trench becomes a part of the individual channels and thus, channel lengths of the transistors in the cell region become elongated. Accordingly, the storage node contact junctions have a decreased level of leakage currents, thereby increasing data retention time.

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