Method of fabricating a phase shift mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C216S012000

Reexamination Certificate

active

07338736

ABSTRACT:
A phase shift mask includes a first non-phase shift region, a first phase shift region adjacent the first non-phase shift region, a second non-phase shift region, a second phase shift region adjacent the second non-phase shift region, and an opaque region interposed between said second phase shift and non-phase shift regions. The first and second non-phase shift regions transmit an exposure light at its original phase, whereas the first and second phase shift regions invert the phase of the exposure light. The phase shift mask is manufactured by first forming a layer of opaque material on a transparent mask substrate. The first phase shift region and the second phase and non-phase shift regions are formed by selectively etching the opaque material and underlying portions of the mask substrate to form recesses in the substrate. On the other hand, only the opaque layer is etched from the mask substrate to form the first non-phase shift region, and is left on the substrate between the second phase shift and non-phase shift regions.

REFERENCES:
patent: 5300379 (1994-04-01), Dao et al.
patent: 5932378 (1999-08-01), Lee
patent: 6093507 (2000-07-01), Tzu
patent: 6458495 (2002-10-01), Tsai et al.

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