Memory circuit

Error detection/correction and fault detection/recovery – Pulse or data error handling – Digital data error correction

Reexamination Certificate

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Details

C714S763000, C714S773000

Reexamination Certificate

active

10193319

ABSTRACT:
When to a memory cell array21a read/write operation is performed of the 7-bit data in which parity bits of 3 bits are added to data of 4 bits, an error correction is carried out in concern to each of the 7-bit data. The memory cell array is divided into memory units31to37each of which has four bits which are arranged along a direction of a word line. On writing the 7-bit data in the memory cell array, bits of the 7-bit data that are different from one another are written as written bit data along the direction of the word line in the memory units31to37, respectively. In the 7-bit data, the written bit data has an interval of four bits. Error correcting circuits performs an error correction of the 7-bit data in each of the 7-bit data.

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Hyungsoon Shin, “Modeling of Alpha-Particle-Induced Soft Error Rate in DRAM”, IEEE Transactions of Electron Devices, vol. 46, No. 9, Sep. 1999, pp. 1850-1857.

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