Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2006-10-03
2006-10-03
Norton, Nadine (Department: 1765)
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
C216S061000, C118S712000, 27, C438S014000, C438S016000, C455S118000
Reexamination Certificate
active
07115210
ABSTRACT:
Disclosed is a method and system for detecting abnormal plasma discharge that is useful in, for example, detecting plasma leakage in a reactive ion etching (RIE) chamber. The system includes electrical contacts connected to the chamber that provide an input signal to the chamber. This input signal can be generated by a radio frequency (RF) generator that is connected to the electrical contacts. A variable power controller connected to the RF generator gradually increases (ramps) the power of the input signal being supplied to the chamber.
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Calderoni Robert A.
Cline June
Dutra Kellie L.
Meunier Ronald G.
Walko Joseph P.
Canale Anthony
George Patricia
Gibb I.P. Law Firm LLC
Norton Nadine
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