Measurement to determine plasma leakage

Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C216S061000, C118S712000, 27, C438S014000, C438S016000, C455S118000

Reexamination Certificate

active

07115210

ABSTRACT:
Disclosed is a method and system for detecting abnormal plasma discharge that is useful in, for example, detecting plasma leakage in a reactive ion etching (RIE) chamber. The system includes electrical contacts connected to the chamber that provide an input signal to the chamber. This input signal can be generated by a radio frequency (RF) generator that is connected to the electrical contacts. A variable power controller connected to the RF generator gradually increases (ramps) the power of the input signal being supplied to the chamber.

REFERENCES:
patent: 5326975 (1994-07-01), Barna
patent: 5467013 (1995-11-01), Williams et al.
patent: 5576629 (1996-11-01), Turner et al.
patent: 5810963 (1998-09-01), Tomioka
patent: 5925212 (1999-07-01), Rice et al.
patent: 5971591 (1999-10-01), Vonna et al.
patent: 6228278 (2001-05-01), Winniczek et al.
patent: 6599759 (2003-07-01), Yang et al.
patent: 6661250 (2003-12-01), Kim et al.
patent: 6756790 (2004-06-01), Yakabe et al.
patent: 2002/0039887 (2002-04-01), Delabbaye et al.
patent: 2002/0171454 (2002-11-01), Yakabe et al.
patent: 2003/0085662 (2003-05-01), Kwon et al.
patent: 2003/0121609 (2003-07-01), Ohmi et al.
patent: 2003/0227283 (2003-12-01), Cox et al.
patent: 2004/0055868 (2004-03-01), O'Leary et al.
patent: 2004/0116080 (2004-06-01), Chen et al.
patent: 2004/0129218 (2004-07-01), Takahashi et al.
patent: 2004/0135590 (2004-07-01), Quon
patent: 2004/0149384 (2004-08-01), Kanno et al.
patent: 2005/0145334 (2005-07-01), Parsons
patent: 2003173973 (2003-06-01), None
Hanson et al. of Advanced Energy: Optimization Chemical Vapor Deposition Processing through RF Metrology, 1999.
Angra et al., Pramana—Journal of Physics, vol. 54, No. 5, May 2000, pp. 763-769: Unstable Plasma Charicteristics in Mirror Field Electron Cyclotron Resonance, Microwave Ion Source.
Plasma diagnostics in industry; M B Hopkins and J F Iawler; Plasma Phy. Control Fussion 42; 2000; B189-B197; Printed in the UK.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Measurement to determine plasma leakage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Measurement to determine plasma leakage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Measurement to determine plasma leakage will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3618727

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.