Measurement and control of linewidths in periodic structures usi

Details Measurement and control of linewidths in periodic structures usi Measurement and control of linewidths in periodic structures usi

1995-10-10

1998-04-14

Rosenberger, Richard A.

Optics: measuring and testing

By polarized light examination

Of surface reflection

356381, G01B 1102, G01N 2121

Patent

active

057399093

ABSTRACT:
A non destructive method of spectroscopic ellipsometry adapted to measure the width of features in periodic structures, particularly those features which are less than one micron wide. The method is also adapted to make comparisons between a known reference structure and a sample structure, and to control the fabrication of periodic structures in a plasma etching reactor. Peaks in functions DELTA and PSI versus wavelength are monitored and correlated against reference curves, permitting etching conditions to be modified. This technique avoids the need for use of scanning electron microscopy to measure the linewidth, which is a destructive method. It also posses an advantage over scatterometry which requires several detectors arrayed at different angles from an incident beam to measure the different diffracted orders.

REFERENCES:
patent: 4763183 (1988-08-01), Ng et al.
patent: 5114233 (1992-05-01), Clark et al.
patent: 5539766 (1996-07-01), Ishino et al.
B. Drevillon, "Progress in Crystal Growth and Characterization of Materials", 1993, vol. 27, pp. 1-87, Pergamon Press.
R. H. Krukar, "Methodology for the Use of Diffracted Scatter Analysis to Measure Critical Dimensions of Periodic structures" Ph.D. Tesis University of New Mexico, 1993, CH. 3, pp. 10-18.

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