Materials and methods for etching silicides, polycrystalline sil

Details Materials and methods for etching silicides, polycrystalline sil Materials and methods for etching silicides, polycrystalline sil

1989-11-29

1992-05-12

Simmons, David A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156656, 156657, H01L 2100

Patent

active

051124351

ABSTRACT:
Gas chemistry and a related RIE mode process is described for etching silicides of the refractory metals titanium, tantalum, tungsten and aluminum and for etching composites of these silicides on polycrystalline silicon layers. BCl.sub.3 is added to the HCl/Cl.sub.2 gas chemistry used for the polysilicon etch along with additives selected from fluorinated gases and oxygen to satisfy the multiple requirement of the two-step silicide-polysilicon etch process, including the silicide-to-polysilicon etch ratio requirement.

REFERENCES:
patent: 4397724 (1983-08-01), Morgan
patent: 4412885 (1983-11-01), Wang et al.
patent: 4569718 (1986-02-01), Butherys et al.
patent: 4585515 (1986-04-01), Maa
patent: 4613900 (1986-09-01), Tam et al.
patent: 4778563 (1988-10-01), Stone
Light et al., "Pattern of Tantalum Polycide Films", Journal of the Electrochemical Society, 2/84, pp. 459-461.

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