Material infusion in a trap layer structure using gas...

Details Material infusion in a trap layer structure using gas... Material infusion in a trap layer structure using gas...

2011-05-24

2011-05-24

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S514000, C250S424000, C250S42300F

Reexamination Certificate

active

07947582

ABSTRACT:
A method of preparing a floating trap type device on a substrate is described. The method comprises forming a trap layer structure on a substrate, and modifying a composition of one or more layers in the trap layer structure by exposing the trap layer structure to a gas cluster ion beam (GCIB).

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