Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2005-07-19
2005-07-19
Huff, Mark F. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S311000, C430S313000, C430S316000, C430S317000, C438S653000, C216S067000, C216S075000
Reexamination Certificate
active
06919168
ABSTRACT:
A method of etching a noble metal electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.35 μm and having a noble metal profile equal to or greater than about 80°. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the noble metal electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising a gas selected from the group consisting of nitrogen, oxygen, a halogen (e.g., chlorine), argon, and a gas selected from the group consisting of BCl3, HBr, and SiCl4mixtures thereof. Masking methods and etching sequences for patterning high density RAM capacitors are also provided.
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Hwang Jeng H.
Lin True-Lon
Mak Steve S. Y.
Schaller John W.
Ying Chentsau
Applied Materials Inc.
Bach Joseph
Barreca Nicole
Bean Kathi
Church Shirley L.
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