Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-02-27
2007-02-27
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S259000, C438S294000, C257S315000, C257S623000
Reexamination Certificate
active
10763044
ABSTRACT:
The invention relates to a production process for a flash memory from a semi-conductor substrate fitted with at least two adjacent rows of precursor stacks of floating gate transistors, the precursor stacks being at least partially covered by a protective resin and being separated by a formation zone for a source line. The process includes forming a trench in the formation zone for the source line by an attack of this zone and of the protective resin. The result of the attack step includes a deposit of residue from the resin below the precursor stacks. The residue deposit is removed. A source line is implanted in the formation zone below the precursor stacks. This process enables the time needed for erasing the memory to be reduced.
REFERENCES:
patent: 5447877 (1995-09-01), Sasaki
patent: 5880499 (1999-03-01), Oyama
patent: 6103574 (2000-08-01), Iwasaki
patent: 6348406 (2002-02-01), Subramanian et al.
patent: 6485895 (2002-11-01), Choi et al.
patent: 2002/0132425 (2002-09-01), Song et al.
patent: 2003/0122185 (2003-07-01), Wang et al.
patent: 2003/0165750 (2003-09-01), Tanaka et al.
patent: 2003/0194657 (2003-10-01), Renaldo et al.
patent: 0 680 080 (1995-11-01), None
S. Wolf and R.N. Tauber ,“Silicon Processing for the VLSI Era”, 1986, Lattice press, vol. 1, p. 564-565.
French Preliminary Search Report dated Nov. 6, 2003 for French Application No. 0300681.
Laffont Romain
Mirabel Jean-Michel
Pizzuto Olivier
Fleit Kain Gibbons Gutman Bongini & Bianco P.L.
Gibbons Jon A.
Jorgenson Lisa K.
Kebede Brook
Kim Su C.
LandOfFree
Manufacturing process for a flash memory and flash memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing process for a flash memory and flash memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing process for a flash memory and flash memory... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3842820