Manufacturing method of static random access memory

Details Manufacturing method of static random access memory Manufacturing method of static random access memory

2007-09-07

2009-12-29

Ho, Tu-Tu V (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S244000, C438S248000, C438S386000, C438S391000, C438S430000, C257S303000, C257S300000, C257S301000, C257S903000, C257SE21396, C257SE21661, C257SE27098

Reexamination Certificate

active

07638390

ABSTRACT:
A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the substrate to define an active region. The active region has an opening. The transistor is set up over the active region of the substrate. The source region of the transistor is next to the opening. The upper electrode is set up over the opening such that the opening is completely filled. The capacitor dielectric layer is set up between the upper electrode and the substrate.

REFERENCES:
patent: 5879980 (1999-03-01), Selcuk et al.
patent: 2004/0222489 (2004-11-01), Chang et al.
patent: 2005/0056885 (2005-03-01), Pai et al.

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