Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2011-08-02

2011-08-02

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S216000, C438S287000, C438S785000, C257S274000, C257S324000, C257SE21632, C257SE21625

Reexamination Certificate

active

07989283

ABSTRACT:
A manufacturing method of a semiconductor device is provided for improving the reliability of a semiconductor device including a MISFET with a high dielectric constant gate insulator and a metal gate electrode. A first Hf-containing insulating film containing Hf, La, and O as a principal component is formed as a high dielectric constant gate insulator for an n-channel MISFET. A second Hf-containing insulating film containing Hf, Al, and O as a principal component is formed as a high dielectric constant gate insulator for a p-channel MISFET. Then, a metal film and a silicon film are formed and patterned by dry etching to thereby form first and second gate electrodes. Thereafter, parts of the first and second Hf-containing insulating films not covered with the first and second gate electrodes are removed by wet etching. At this time, a wet process with an acid solution not containing hydrofluoric acid, and another wet process with an alkaline solution are performed, and then a further wet process with an acid solution containing hydrofluoric acid is performed.

REFERENCES:
patent: 2010/0320542 (2010-12-01), Kawahara et al.
patent: 2003-173998 (2003-06-01), None
patent: 2005-032851 (2005-02-01), None
patent: 2005-079311 (2005-03-01), None

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