Manufacturing method of semiconductor and manufacturing method o

Details Manufacturing method of semiconductor and manufacturing method o Manufacturing method of semiconductor and manufacturing method o

1998-02-10

2000-07-04

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438795, 438796, 438797, 438798, 438799, 438 96, 438166, 438308, H01L 2100, H01L 2184, H01L 21324, H01L 21477, H01L 2126

Patent

active

060838019

ABSTRACT:
The nickel element is provided selectively, i.e., adjacent to part of the surface of an amorphous silicon film in a long and narrow opening. The amorphous silicon film is irradiated with linear infrared light beams emitted from respective linear infrared lamps while scanned with the linear beams perpendicularly to the longitudinal direction of the opening. The longitudinal direction of the linear beams are set coincident with that of the opening. The infrared light beams are absorbed by the silicon film mainly as thermal energy, whereby a negative temperature gradient is formed in the silicon film. The temperature gradient moves as the lamps are moved for the scanning. The direction of the negative temperature gradient is set coincident with the lamp movement direction and an intended crystal growth direction, which enables crystal growth to proceed parallel with a substrate uniformly over a long distance.

REFERENCES:
patent: 4001047 (1977-01-01), Boah
patent: 5612250 (1997-03-01), Ohtani et al.
patent: 5616506 (1997-04-01), Takemura
patent: 5637515 (1997-06-01), Takemura
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5840118 (1998-11-01), Yamazaki
patent: 5932893 (1999-08-01), Miyanaga et al.
patent: 5937282 (1999-08-01), Nakajima et al.
patent: 5956579 (1999-09-01), Yamazaki et al.
patent: 5966594 (1999-10-01), Adachi et al.
patent: 5994172 (1999-11-01), Ohtani et al.

Affiliated with

Also associated with

Rating

Manufacturing method of semiconductor and manufacturing method o does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of semiconductor and manufacturing method o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor and manufacturing method o will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1485723