Manufacturing method of CMOS transistor

Details Manufacturing method of CMOS transistor Manufacturing method of CMOS transistor

1997-01-23

1998-05-26

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438514, 438530, H01L 21265

Patent

active

057563829

ABSTRACT:
Gate electrodes of an N-channel transistor and a P-channel transistor are formed on a semiconductor substrate with a gate insulator therebetween. After conducting a first thermal treatment to the gate electrodes, N-type heavily doped diffusion layers to be a source or a drain of the N-channel transistor are formed using the gate electrode of the N-channel transistor as a mask. After conducting a second thermal treatment to the N-type heavily doped diffusion layers at a lower temperature than that of the first thermal treatment, P-type heavily doped diffusion layers to be a source or a drain of the P-channel transistor are formed using the gate electrode of the P-channel transistor as a mask. Then, a third thermal treatment is conducted to the P-type heavily doped diffusion layers at a lower temperature than that of the second thermal treatment.

REFERENCES:
patent: 4642878 (1987-02-01), Maeda
patent: 4764477 (1988-08-01), Chang et al.
patent: 4886764 (1989-12-01), Miller et al.
patent: 4978626 (1990-12-01), Poon et al.
patent: 4997782 (1991-03-01), Bergonzoni
patent: 5006477 (1991-04-01), Farb
patent: 5093276 (1992-03-01), Asahina
patent: 5141890 (1992-08-01), Haken
patent: 5234850 (1993-08-01), Liao
patent: 5270233 (1993-12-01), Hamatake
patent: 5409847 (1995-04-01), Segawa et al.
patent: 5447872 (1995-09-01), Segawa et al.

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