Method of manufacturing an active region of a semiconductor by d

Details Method of manufacturing an active region of a semiconductor by d Method of manufacturing an active region of a semiconductor by d

1996-12-23

1998-05-26

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438307, 438919, H01L 218238

Patent

active

057563837

ABSTRACT:
A semiconductor device fabrication process in which an active region of a semiconductor device is formed by diffusing a dopant out of a sidewall spacer. According to the process, a gate electrode is formed on a substrate and an active region of the substrate adjacent the gate electrode is doped with a first dopant of a first conductivity type to form a heavily-doped region in the active region. A spacer layer having a second dopant disposed therein is then formed. The second dopant has a second conductivity type opposite of the first conductivity type. Portions of the spacer layer are removed to form a spacer containing the second dopant on a sidewall of the gate electrode. The second dopant is diffused out of the spacer into a portion of the heavily-doped region to form a lower conductivity region in the active region. The lower conductivity region may form an LDD region of an LDD structure.

REFERENCES:
patent: 4356623 (1982-11-01), Hunter
patent: 4837179 (1989-06-01), Foster et al.
patent: 5254866 (1993-10-01), Ogoh
patent: 5504024 (1996-04-01), Hsu
S. Wolf, Silicon Processing for the VLSI Era, vol. 2: Processing Integration, pp. 354-363 and 437-439, copyright 1990.

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